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KMID : 0381920120420030158
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Korean Journal of Microscopy
2012 Volume.42 No. 3 p.158 ~ p.163
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Precise Comparison of Two-dimensional Dopant Profiles Measured by Low-voltage Scanning Electron Microscopy and Electron Holography Techniques
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Hyun Moon-Seop
Yoo Jung-Ho
Kwak Noh-Yeal
Kim Won
Rhee Choong-Kyun
Yang Jun-Mo
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Abstract
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Detailed comparison of low-voltage scanning electron microscopy and electron holography techniques for two-dimensional (2D) dopant profi ling was carried out with using the same multilayered p-n junction specimen. The dopant profiles obtained from two methods are in good agreement with each other. It demonstrates that reliability of dopant profile
measurement can be increased through precise comparison of 2D profi les obtained from various microscopic techniques.
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KEYWORD
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2-dimensional dopant profiling, p-n junction, Electron holography, Lowvoltage
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